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| MICROWAVE CORPORATION v00.1202 HMC441LM1 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 7.0 - 15.5 GHz Features Gain: 15 dB Saturated Power: +21.5 dBm @ 27% PAE Single Supply Voltage: +5.0 V w/ Optional Gate Bias 50 Ohms Matched Input/Output Leadless SMT Package, 25mm2 8 AMPLIFIERS - SMT Typical Applications The HMC441LM1 is a medium PA for: * Point-to-Point Radios * Point-to-Multi-Point Radios * VSAT * LO Driver for HMC Mixers * Military EW & ECM Functional Diagram General Description The HMC441LM1 is a broadband 7 to 15.5 GHz GaAs PHEMT MMIC Medium Power Amplifier in an SMT leadless chip carrier package. The amplifier provides 15 dB of gain, 21.5 dBm of saturated power at 27% PAE from a +5.0V supply voltage. An optional gate bias is provided to allow adjustment of gain, RF output power, and DC power dissipation. This 50 Ohm matched amplifier does not require any external components making it an ideal linear gain block or driver for HMC SMT mixers. Vgg1, Vgg2: Optional Gate Bias Electrical Specifications, TA = +25 C, Vdd = 5V, Vgg1 = Vgg2 = Open Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd) 15.5 12.5 Min. Typ. 7.0 - 8.0 15 0.015 9 14 18.5 19.5 29 4.5 90 16 0.02 13.5 Max. Min. Typ. 8.0 - 12.5 16 0.015 13 17 19 20.5 30 4.5 90 17 0.02 12.5 Max. Min. Typ. 12.5 - 14.0 15 0.015 16 20 20 21.5 30 4.5 90 16 0.02 11 Max. Min. Typ. 14.0 - 15.5 13.5 0.015 16 17 19 20.5 30 4.5 90 0.02 Max. Units GHz dB dB/ C dB dB dBm dBm dBm dB mA 8 - 190 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v00.1202 HMC441LM1 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 7.0 - 15.5 GHz Broadband Gain & Return Loss 20 15 10 Gain vs. Temperature 20 18 16 8 AMPLIFIERS - SMT 8 - 191 RESPONSE (dB) 5 0 -5 -10 -15 -20 -25 -30 4 6 8 10 GAIN (dB) S21 S11 S22 14 12 10 8 6 4 2 0 +25C +85C -40C 12 14 16 18 20 6 7 8 9 10 11 12 13 14 15 16 17 18 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature 0 +25C Output Return Loss vs. Temperature 0 +25C -5 -5 RETURN LOSS (dB) -10 RETURN LOSS (dB) +85C -40C +85C -40C -10 -15 -15 -20 -20 -25 6 7 8 9 10 11 12 13 14 15 16 17 18 FREQUENCY (GHz) -25 6 7 8 9 10 11 12 13 14 15 16 17 18 FREQUENCY (GHz) P1dB vs. Temperature 23 22 21 20 Psat vs. Temperature 23 22 21 20 P1dB (dBm) 19 18 17 16 15 14 13 6 7 8 9 10 11 12 13 14 15 16 17 18 FREQUENCY (GHz) +25C +85C -40C Psat (dBm) 19 18 17 16 15 14 13 6 7 8 9 10 11 12 13 14 15 16 17 18 FREQUENCY (GHz) +25C +85C -40C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v00.1202 HMC441LM1 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 7.0 - 15.5 GHz 8 AMPLIFIERS - SMT Power Compression @ 12 GHz 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -10 Output IP3 vs. Temperature 36 34 32 30 Pout (dBm), GAIN (dB), PAE (%) Pout Gain PAE OIP3 (dBm) 28 26 24 22 20 18 16 +25C +85C -40C -8 -6 -4 -2 0 2 4 6 8 10 6 7 8 9 10 11 12 13 14 15 16 17 18 INPUT POWER (dBm) FREQUENCY (GHz) Gain, Power & OIP3 vs. Supply Voltage @ 12 GHz GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 32 30 28 26 24 22 20 18 16 14 12 10 3 3.5 4 4.5 5 5.5 Vdd Supply Voltage (Vdc) Gain P1dB Psat OIP3 Gain, Power, OIP3 & Idd vs. Gate Voltage @ 12 GHz GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 35 30 25 20 15 10 5 0 -2 -1.8 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 Gain P1dB Psat OIP3 Idd 210 180 150 120 90 60 30 0 Idd (mA) Vgg1, Vgg2 Gate Volltage (Vdc) Noise Figure vs. Temperature 10 9 8 +25C +85C -40C Reverse Isolation vs. Temperature 0 -10 +25C +85C -40C NOISE FIGURE (dB) ISOLATION (dB) 7 6 5 4 3 2 1 0 6 7 8 9 10 11 12 13 14 15 -20 -30 -40 -50 -60 16 17 18 6 7 8 9 10 11 12 13 14 15 16 17 18 FREQUENCY (GHz) FREQUENCY (GHz) 8 - 192 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v00.1202 HMC441LM1 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 7.0 - 15.5 GHz Absolute Maximum Ratings Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg1,Vgg2) RF Input Power (RFin)(Vdd = +5.0 Vdc) Channel Temperature Continuous Pdiss (T = 85 C) (derate 10 mW/C above 85 C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature +6.0 Vdc -8.0 to 0 Vdc +20 dBm 175 C 0.9 W Typical Supply Current vs. Vdd Vdd (V) +5.5 +5.0 +4.5 +3.3 +3.0 Idd (mA) 92 90 88 83 82 8 AMPLIFIERS - SMT 8 - 193 100 C/W -65 to +150 C -40 to +85 C Note: Amplifier will operate over full voltage range shown above Outline Drawing NOTES: 1. MATERIAL: PLASTIC 2. PLATING: GOLD OVER NICKEL 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. ALL TOLERANCES ARE 0.005 [0.13]. 5. ALL GROUNDS MUST BE SOLDERED TO PCB RF GROUND. 6. * INDICATES PIN 1. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v00.1202 HMC441LM1 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 7.0 - 15.5 GHz 8 AMPLIFIERS - SMT Pin Descriptions Pin Number 1, 3, 5 Function N/C Description This pin may be connected to RF ground. Interface Schematic 2 Vdd Power Supply Voltage for the amplifier. An external bypass capacitor of 100 pF is recommended. 4 RF OUT This pin is AC coupled and matched to 50 Ohms from 7.0 - 15.5 GHz. 6, 7 Vgg2, Vgg1 Optional gate control for amplifier. If left open, the amplifier will run at standard current. Negative voltage applied will reduce current. 8 RF IN This pin is AC coupled and matched to 50 Ohms from 7.0 - 15.5 GHz. GND Package bottom must be connected to RF ground. 8 - 194 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v00.1202 HMC441LM1 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 7.0 - 15.5 GHz Evaluation PCB 8 AMPLIFIERS - SMT The grounded Co-Planar Wave Guide (CPWG) PCB input/output transitions allow use of Ground-Signal-Ground (GSG) probes for testing. Suggested probe pitch is 400um (16 mils). Alternatively, the board can be mounted in a metal housing with 2.4mm coaxial connectors. Evaluation Circuit Board Layout Design Details Layout Technique Material Dielectric Thickness Microstrip Line Width CPWG Line Width CPWG Line to GND Gap Ground Via Hole Diameter C1 - C3 Micro Strip to CPWG Rogers 4003 with 1/2 oz, Cu 0.008" (0.20 mm) 0.018" (0.46 mm) 0.016" (0.41 mm) 0.005" (0.13 mm) 0.008" (0.20 mm) 100 pF Capacitor, 0402 Pkg. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 195 MICROWAVE CORPORATION v00.1202 HMC441LM1 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 7.0 - 15.5 GHz 8 AMPLIFIERS - SMT Suggested LM1 PCB Land Pattern Tolerance: 0.003" ( 0.08 mm) Amplifier Application Circuit Note: Optional gate bias connections. Vgg1 and Vgg2 may be connected to a common Vgg feed. 8 - 196 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v00.1202 HMC441LM1 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 7.0 - 15.5 GHz Recommended SMT Attachment Technique Preparation & Handling of the LM1 Microwave Package for Surface Mounting The HMC LM1 package was designed to be compatible with high volume surface mount PCB assembly processes. The LM1 package requires a specific mounting pattern to allow proper mechanical attachment and to optimize electrical performance at millimeterwave frequencies. This PCB layout pattern can be found on each LM1 product data sheet. It can also be provided as an electronic drawing upon request from Hittite Sales & Application Engineering. Follow these precautions to avoid permanent damage: Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. LM1 devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC & ground contact areas. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. General Handling: Handle the LM1 package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, & ground contacts on the package bottom. Do not apply excess pressure to the top of the lid. Solder Materials & Temperature Profile: Follow the information contained in the application note. Hand soldering is not recommended. Conductive epoxy attachment is not recommended. Solder Paste: Solder paste should be selected based on the user's experience and be compatible with the metallization systems used. See the LM1 data sheet Outline drawing for pin & ground contact metallization schemes. Solder Paste Application: Solder paste is generally applied to the PCB using either a stencil printer or dot placement. The volume of solder paste will be dependent on PCB and component layout and should be controlled to ensure consistent mechanical & electrical performance. Excess solder may create unwanted electrical parasitics at high frequencies. Solder Reflow: The soldering process is usually accomplished in a reflow oven but may also use a vapor phase process. A solder reflow profile is suggested above. Prior to reflowing product, temperature profiles should be measured using the same mass as the actual assemblies. The thermocouple should be moved to various positions on the board to account for edge and corner effects and varying component masses. The final profile should be determined by mounting the thermocouple to the PCB at the location of the device. Follow solder paste and oven vendor's recommendations when developing a solder reflow profile. A standard profile will have a steady ramp up from room temperature to the pre-heat temperature to avoid damage due to thermal shock. Allow enough time between reaching pre-heat temperature and reflow for the solvent in the paste to evaporate and the flux to completely activate. Reflow must then occur prior to the flux being completely driven off. The duration of peak reflow temperature should not exceed 15 seconds. Packages have been qualified to withstand a peak temperature of 235C for 15 seconds. Verify that the profile will not expose device to temperatures in excess of 235C. Cleaning: A water-based flux wash may be used. 225 200 8 AMPLIFIERS - SMT 8 - 197 TEMPERATURE ( C) 175 150 125 100 75 50 25 0 1 2 3 4 5 TIME (min) 6 7 8 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 0 |
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